Radiation Hard CMOS Sensors and Engineered Substrates for Detectors at High Energy Colliders

Office:

DOE Office of High Energy Physics

Topic Description:

Of interest are monolithic CMOS-based sensors with moderate depth (5-20 micron) high resistivity substrates that can be fully depleted and can achieve charge collection times of 20 ns or less. Technologies of interest include deep n- and p-wells to avoid parasitic charge collection in CMOS circuitry and geometries with low capacitance charge collection nodes. We aim for stitched, large area arrays of sensors with sensor thickness less than 50 microns and pixel pitch of less than 25 microns.

Document Page Number:

127

Department:

Department of Energy

Online link:

https://science.osti.gov/-/media/sbir/pdf/TechnicalTopics/FY2020_Phase_I_Release_2_Topics.pdf?la=en&hash=935C6CA9A54809788F388CAC3E8A8A1E2B626C10

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Topic ID:

34a

Expiration date:

Monday, February 24, 2020

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Radiation Hard CMOS Sensors and Engineered Substrates for Detectors at High Energy Colliders